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A temperature characterization of (Si-FinFET) based on channel oxide thickness

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Title Statement A temperature characterization of (Si-FinFET) based on channel oxide thickness
 
Added Entry - Uncontrolled Name Atalla, Yousif; University Malaysia Pahang (UMP)
Hashim, Yasir; Ishik University
Abd Ghafar, Abdul Nasir; University Malaysia Pahang (UMP)
Jabar, Waheb A.; University Malaysia Pahang (UMP)
 
Uncontrolled Index Term FinFET; nano-sensor; oxide thickness; temperature;
 
Summary, etc. <p>This paper presents the temperature-gate oxide thickness characteristics of a fin field-effect transistor (FinFET) and discusses the possibility of using such a transistor as a temperature nano-sensor. The investigation of channel oxide thickness–based temperature characteristics is useful to optimized electrical and temperature characteristics of FinFET. Current–voltage characteristics with different temperatures and gate oxide thickness values (Tox = 1, 2, 3, 4, and 5 nm) are initially simulated, and the diode mode connection is considered to measure FinFET’s temperature sensitivity. Finding the best temperature sensitivity of FinFET is based on the largest change in current (∆I) within a working voltage range of 0–5 V. According to the results, the temperature sensitivity of FinFET increases linearly with oxide thickness within the range of 1–5 nm, furthermore, the threshold voltage and drain-induced barrier lowering increase with increasing oxide thickness. Also, the subthreshold swing (SS) is close to the ideal value at the minimum oxide thickness (1 nm) then increases and diverges with increasing oxide thickness. So, the best oxide thickness (nearest SS value to the ideal one) of FinFET under the conditions described in this research is 1 nm.</p>
 
Publication, Distribution, Etc. Universitas Ahmad Dahlan
2019-10-01 00:00:00
 
Electronic Location and Access application/pdf
http://journal.uad.ac.id/index.php/TELKOMNIKA/article/view/11798
 
Data Source Entry TELKOMNIKA (Telecommunication Computing Electronics and Control); Vol 17, No 5: October 2019
 
Language Note en
 
Terms Governing Use and Reproduction Note Copyright (c) 2020 Universitas Ahmad Dahlan